Scan synchronous-write-through testing architectures for a memory device

ABSTRACT

An exemplary testing environment can operate in a testing mode of operation to test whether a memory device or other electronic devices communicatively coupled to the memory device operate as expected or unexpectedly as a result of one or more manufacturing faults. The testing mode of operation includes a shift mode of operation, a capture mode of operation, and/or a scan mode of operation. In the shift mode of operation and the scan mode of operation, the exemplary testing environment delivers a serial input sequence of data to the memory device. In the capture mode of operation, the exemplary testing environment delivers a parallel input sequence of data to the memory device. The memory device thereafter passes through the serial input sequence of data or the parallel input sequence of data to provide an output sequence of data in the shift mode of operation or the capture mode of operation or passes through the serial input sequence of data to provide a serial output sequence of scan data in the scan mode of operation.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application is a continuation of U.S. patent applicationSer. No. 16/888,013 filed on May 29, 2020 and issuing as U.S. Pat. No.11,256,588 on Feb. 22, 2022, which is a continuation of U.S. patentapplication Ser. No. 15/700,877 filed on Sep. 11, 2017 and issued asU.S. Pat. No. 10,705,934, which claims the benefit of U.S. ProvisionalPatent Appl. No. 62/527,331, filed on Jun. 30, 2017, each of which isincorporated herein by reference in its entirety.

BACKGROUND

A memory device is an electronic device for reading and/or writingelectronic data. The memory device can be implemented as volatilememory, such as random-access memory (RAM), which requires power tomaintain its stored information or non-volatile memory, such asread-only memory (ROM), which can maintain its stored information evenwhen not powered. The RAM can be implemented in a dynamic random-accessmemory (DRAM), a static random-access memory (SRAM), and/or anon-volatile random-access memory (NVRAM), often referred to as a flashmemory, configuration. The electronic data can be read from and/orwritten into an array of memory cells which can be accessible throughvarious control lines. The two basic operations performed by the memorydevice are “read”, in which the electronic data stored in the array ofmemory cells is read out, and “write” in which the electronic data isstored in the array of memory cells. In addition to the array of memorycells, the memory device includes peripheral circuitry to read theelectronic data from the array of memory cells and to write theelectronic data to the array of memory cells. Design for test, alsoreferred to as design for testability, in the context of the memorydevice, supplements a design of the memory device with testabilityfeatures to provide improved access to internal circuitry of the memorydevice, such as the peripheral circuitry to provide an example, to moreeasily control and/or observe this internal circuitry.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 illustrates a block diagram of an exemplary testing environmentfor testing a memory device according to an exemplary embodiment of thepresent disclosure;

FIG. 2 illustrates a block diagram of a memory device according to anexemplary embodiment of the present disclosure;

FIG. 3 illustrates a block diagram of a first exemplary embodiment forthe memory device according to an exemplary embodiment of the presentdisclosure;

FIG. 4 illustrates a block diagram of a second exemplary embodiment forthe memory device according to an exemplary embodiment of the presentdisclosure;

FIG. 5 illustrates a block diagram of a third exemplary embodiment forthe memory device according to an exemplary embodiment of the presentdisclosure;

FIG. 6 illustrates a block diagram of a fourth exemplary embodiment forthe memory device according to an exemplary embodiment of the presentdisclosure;

FIG. 7 illustrates a flowchart of an exemplary shift mode of operationof the exemplary testing environment according to an exemplaryembodiment of the present disclosure;

FIG. 8 illustrates a flowchart of an exemplary capture mode of operationof the exemplary testing environment according to an exemplaryembodiment of the present disclosure; and

FIG. 9 illustrates a flowchart of an exemplary scan mode of operation ofthe exemplary testing environment according to an exemplary embodimentof the present disclosure.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over a second feature in the description that followsmay include embodiments in which the first and second features areformed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is does not in itselfdictate a relationship between the various embodiments and/orconfigurations described.

Overview

An exemplary testing environment can operate in a testing mode ofoperation to test whether a memory device or other electronic devicescommunicatively coupled to the memory device operate as expected orunexpectedly as a result of one or more manufacturing faults. Thetesting mode of operation includes a shift mode of operation, a capturemode of operation, and/or a scan mode of operation. In the shift mode ofoperation and the scan mode of operation, the exemplary testingenvironment delivers a serial input sequence of data to the memorydevice. In the capture mode of operation, the exemplary testingenvironment delivers a parallel input sequence of data to the memorydevice. The memory device thereafter passes through the serial inputsequence of data or the parallel input sequence of data to provide anoutput sequence of data in the shift mode of operation or the capturemode of operation or passes through the serial input sequence of data toprovide a serial output sequence of scan data in the scan mode ofoperation.

Exemplary Testing Environment for Testing a Memory Device

FIG. 1 illustrates a block diagram of an exemplary testing environmentfor testing a memory device according to an exemplary embodiment of thepresent disclosure. As illustrated in FIG. 1 , an exemplary testingenvironment 100 can operate in a testing mode of operation to testwhether a memory device or other electronic devices communicativelycoupled to the memory device operate as expected or unexpectedly as aresult of one or more manufacturing faults. The testing mode ofoperation includes a shift mode of operation, a capture mode ofoperation, and/or a scan mode of operation. The signal flow for theshift mode of operation is indicated by a direction 190, the signal flowfor the capture mode of operation is indicated by a direction 192, andthe signal flow for the scan mode of operation is indicated by adirection 194 in FIG. 1 . In the shift mode of operation shown by thedirection 190, the exemplary testing environment 100 delivers a serialinput sequence of data to the memory device in accordance with a memoryclocking signal for testing of the memory device for the presence of theone or more manufacturing faults. In the shift mode of operation, thememory device passes through the serial input sequence of data toprovide a serial output sequence of data as an output sequence of testdata in the shift mode of operation. Next, the exemplary testingenvironment 100 delivers the output sequence of test data in accordancewith the memory clocking signal for verification of the functionality ofthe memory device.

In some situations, the memory device can be implemented within a largersystem of other electronic devices. In these situations, the memorydevice can be utilized to assist testing of one or more of these otherelectronic devices for the presence of the one or more manufacturingfaults in the capture mode of operation as shown by the direction 192and/or the scan mode of operation as shown by the direction 194. In thecapture mode of operation as shown by the direction 192, the exemplarytesting environment 100 delivers a parallel input sequence of data tothe memory device in accordance with the memory clocking signal. Thememory device passes through the parallel input sequence of data toprovide a parallel output sequence of data as the output sequence oftest data in the capture mode of operation. Next, the exemplary testingenvironment 100 delivers the output sequence of test data in accordancewith the memory clocking signal for testing of one or more of theseother electronic devices. For example, the output sequence of test datacan be used to electronically stress one or more of these otherelectronic devices to test for the presence of the one or moremanufacturing faults.

Alternatively, the memory device and these other electronic devices canbe configured and arranged to form a scan chain for testing the otherelectronic devices in the scan mode of operation as shown by thedirection 194. In this alternate, the memory device can be configuredand arranged to form a scanning flip-flop within this scan chain. Forexample, the memory device passes through the serial input sequence ofdata to provide a serial output sequence of scan data in the scan modeof operation. In this example, the memory device delivers the serialoutput sequence of scan data in accordance with the memory clockingsignal to test for the presence of the one or more manufacturing faultswithin these other electronic devices. In an exemplary embodiment, thepassing through of the serial input sequence of data in the scan mode ofoperation by the memory device can be referred to as a scanwrite-through. And as discussed above, the scan write through can besynchronized in accordance with the memory clocking signal to providescan synchronous-write-through (SWT) testing of one or more of theseother electronic devices.

Although not illustrated in FIG. 1 , those skilled in the relevantart(s) will recognize the exemplary testing environment 100 can operatein a conventional read/write mode of operation without departing fromthe spirit and scope of the present disclosure. In the conventionalwrite mode of operation, the memory device writes a write sequence ofdata into one or more memory cells. The memory device reads a readsequence of data from one or more memory cells in the conventional readmode of operation. The conventional read/write mode of operation is notto be described in further detail. In the exemplary embodimentillustrated in FIG. 1 , the exemplary testing environment 100 includesfirst functional logic circuitry 102, a memory storage device 104, andsecond functional logic circuitry 106.

As illustrated in FIG. 1 , the first functional logic circuitry 102provides a serial input sequence of data 150 in the shift mode ofoperation as shown by the direction 190 and/or the scan mode ofoperation as shown by the direction 194 or a parallel input sequence ofdata 152 in the capture mode of operation as shown by the direction 192.As discussed above, the serial input sequence of data 150 can beutilized by the memory storage device 104 for testing for the presenceof the one or more manufacturing faults in the shift mode of operationand/or for testing the second functional logic circuitry 106 for thepresence of the one or more manufacturing faults in the scan mode ofoperation. The serial input sequence of data 150, when applied to thememory storage device 104 during the shift mode of operation, enablesthe second logic circuitry 106 to test whether the memory storage device104 operates as expected or unexpectedly as a result of one or moremanufacturing faults within the memory storage device 104. The serialinput sequence of data 150, when applied to the memory storage device104 during the scan mode of operation, enables the exemplary testingenvironment 100 to perform scan chain testing of the second logiccircuitry 106 to test whether the second logic circuitry 106 operates asexpected or unexpectedly as a result of one or more manufacturing faultswithin the second logic circuitry 106. And as also discussed above, theparallel input sequence of data 152 can be utilized by the memorystorage device 104 to assist in testing the second functional logiccircuitry 106 for the presence of the one or more manufacturing faults.The parallel input sequence of data 152, when passed through the memorystorage device 104 during the capture mode of operation, enables thesecond logic circuitry 106 to be tested for the presence of the one ormore manufacturing faults. The one or more manufacturing faults caninclude one or more assertion faults, one or more behavioral faults, oneor more bridging faults, one or more delay faults, one or morefunctional faults, one or more gate-delay faults, one or more line-delayfaults, one or more logical faults, one or more path-delay faults, oneor more pin faults, one or more race faults, one or more transistorfaults, one or more transition faults, and/or any other fault in thememory storage device 104 and/or the second functional logic circuitry106 that will be apparent to those skilled in the relevant art(s)without departing from the spirit and scope of the present disclosure.In the exemplary embodiment illustrated in FIG. 1 , the first functionallogic circuitry 102 includes one or more logical gates, such as one ormore logical AND gates, one or more logical OR gates, one or morelogical INVERTER gates, one or more logical NAND gates, one or morelogical NOR gates, or any combination thereof to provide some examples.In this exemplary embodiment, the one or more logical gates can bearranged to implement an automatic test pattern generator.

As additionally illustrated in FIG. 1 , the memory storage device 104selectively chooses between the serial input sequence of data 150 andthe parallel input sequence of data 152. Thereafter, the memory storagedevice 104 operates on the serial input sequence of data 150 to generatea serial output sequence of test data as an output sequence of test data156 in the shift mode of operation as shown by the direction 190 or onthe parallel input sequence of data 152 to generate a parallel outputsequence of data as the output sequence of test data 156 in the capturemode of operation as shown by the direction 192. Additionally, thememory device can pass through the serial input sequence of data 150 toprovide a serial output sequence of scan data 154 in the scan mode ofoperation as shown by the direction 194.

In the exemplary embodiment illustrated in FIG. 1 , the memory storagedevice 104 includes processing circuitry 108, first multiplexingcircuitry 110, first latching circuitry 112, a memory device 114, secondlatching circuitry 116, and second multiplexing circuitry 118. Theprocessing circuitry 108 controls overall configuration and/or operationof the memory storage device 104. In the exemplary embodimentillustrated in FIG. 1 , the processing circuitry 108 receives a mode ofoperation control signal 158 to cause the memory storage device 104 toenter into the capture mode of operation as shown by the direction 192,when at a first logical level, such as a logical zero to provide anexample, or in the shift mode of operation as shown by the direction 190or the scan mode of operation as shown by the direction 194, when at asecond logical level, such as a logical one to provide an example. Theprocessing circuitry 108 can provide a mode of operation control signal160 to control configuration and/or operation of the second multiplexingcircuitry 118 which is to be discussed in further detail below. As to bedescribed in further detail below, the processing circuitry 108 canprovide the mode of operation control signal 160 at the first logicallevel, such as a logical zero to provide an example, to cause the secondmultiplexing circuitry 118 provide the output sequence of test data 156to the second functional logic circuitry 106 or the second logicallevel, such as a logical one to provide an example, to cause the secondmultiplexing circuitry 118 provide the serial output sequence of scandata 154 to the second functional logic circuitry 106. As such, thememory storage device 104 is characterized as operating in the shiftmode of operation as shown by the direction 190 when the mode ofoperation control signal 158 is at the first logical level and the modeof operation control signal 160 is at the first logical level, in thecapture mode of operation as shown by the direction 192 when the mode ofoperation control signal 158 is at the second logical level and the modeof operation control signal 160 is at the first logical level, and thescan mode of operation as shown by the direction 194 when the mode ofoperation control signal 158 is at the first logical level and the modeof operation control signal 160 is at the second logical level. Also inthe exemplary embodiment illustrated in FIG. 1 , the processingcircuitry 108 can provide a memory clocking signal 164 based on a memoryclocking signal 162. In some situations, the processing circuitry 108can adjust an amplitude, a frequency and/or a phase of the memoryclocking signal 162 to provide the memory clocking signal 164.

The first multiplexing circuitry 110 selectively provides the serialinput sequence of data 150 or the parallel input sequence of data 152 asan input sequence of data 166 based upon the mode of operation controlsignal 158. The first multiplexing circuitry 110 selectively providesthe serial input sequence of data 150 as the input sequence of data 166when the mode of operation control signal 158 at the first logicallevel, such as a logical zero to provide an example. The firstmultiplexing circuitry 110 selectively provides the parallel inputsequence of data 152 as the input sequence of data 166 when the mode ofoperation control signal 158 is at the second logical level, such as alogical one to provide an example. In an exemplary embodiment and asdiscussed above, the first multiplexing circuitry 110 selectivelyprovides the serial input sequence of data 150 to test whether thememory storage device 104 operates as expected or unexpectedly as aresult of the one or more manufacturing faults within the memory storagedevice 104 in the shift mode of operation as shown by the direction 190or to assist in testing the second functional logic circuitry 106 forthe presence of the one or more manufacturing faults in the scan mode ofoperation as shown by the direction 194. Otherwise, the firstmultiplexing circuitry 110 selectively provides the parallel inputsequence of data 152 to assist in testing the second functional logiccircuitry 106 for the presence of the one or more manufacturing faultsin the capture mode of operation as shown by the direction 192.

The first latching circuitry 112 provides the input sequence of data 166as a testing sequence of data 168 in accordance with the memory clockingsignal 164 in the shift mode of operation as shown by the direction 190and in the capture mode of operation as shown by the direction 192. Inan exemplary embodiment, the first latching circuitry 112 includes oneor more gated latches to provide the input sequence of data 166 as thetesting sequence of data 168 upon a rising edge, namely a transitionfrom a logical zero to a logical one, of the memory clocking signal 164.The one or more gated latches can include one or more gated set-reset(SR) logical NOR latches, one or more gated SR logical NAND latches, oneor more SR gated logical AND-OR latches, and/or one or more gated JKlatches to provide some examples.

In the exemplary embodiment illustrated in FIG. 1 , the memory device114 includes a memory array, internal circuitry under test, and internalcircuitry not under test. The internal circuitry under test representscircuitry within the memory device 114, such as a sense amplifier/writedriver, and/or an output latch to provide some examples, that operateson the testing sequence of data 168 to generate the output sequence oftest data 156 to test whether the memory storage device 104 operates asexpected or unexpectedly as a result of the one or more manufacturingfaults within the memory storage device 104 in the shift mode ofoperation as shown by the direction 190 and or to assist in testing thesecond functional logic circuitry 106 for the presence of the one ormore manufacturing faults in the capture mode of operation as shown bythe direction 192. The internal circuitry not under test representscircuitry within the memory device 114, such as a memory array, rowselection circuitry, and/or column selection circuitry to provide someexamples, that is not undergoing the testing in the shift mode ofoperation and the capture mode of operation. In some situations, thememory array and/or the internal circuitry not under test can bedisabled, for example, turned-off, to save power in the testing mode ofoperation. The memory device 114 is further described in FIG. 2 .

The second latching circuitry 116 provides the testing sequence of data168 as the serial output sequence of scan data 154 in accordance withthe memory clocking signal 164 to assist in testing the secondfunctional logic circuitry 106 for the presence of the one or moremanufacturing faults in the scan mode of operation as shown by thedirection 194. In an exemplary embodiment, the second latching circuitry116 includes one or more gated latches to provide the testing sequenceof data 168 as the serial output sequence of scan data 154 upon afalling edge, namely a transition from a logical one to a logical zero,of the memory clocking signal 164. The one or more gated latches caninclude one or more gated set-reset (SR) logical NOR latches, one ormore gated SR logical NAND latches, one or more SR gated logical AND-ORlatches, and/or one or more gated JK latches to provide some examples.

The second multiplexing circuitry 118 selectively provides the serialoutput sequence of scan data 154 or the output sequence of test data 156as an output sequence of data 170 based upon the mode of operationcontrol signal 160. The second multiplexing circuitry 118 selectivelyprovides the output sequence of test data 156 as the output sequence ofdata 170 when the mode of operation control signal 160 at the firstlogical level, such as a logical zero to provide an example. The secondmultiplexing circuitry 118 selectively provides the serial outputsequence of scan data 154 as the output sequence of data 170 when themode of operation control signal 160 at the second logical level, suchas a logical one to provide an example. In an exemplary embodiment andas discussed above, the second multiplexing circuitry 118 selectivelyprovides the serial output sequence of scan data 154 to assist intesting the second functional logic circuitry 106 for the presence ofthe one or more manufacturing faults in the scan mode of operation asshown by the direction 194. In this exemplary embodiment, the secondmultiplexing circuitry 118 selectively provides the output sequence oftest data 156 to test whether the memory storage device 104 operates asexpected or unexpectedly as a result of the one or more manufacturingfaults within the memory storage device 104 in the shift mode ofoperation as shown by the direction 190 or to assist in testing thesecond functional logic circuitry 106 for the presence of the one ormore manufacturing faults in the capture mode of operation as shown bythe direction 192.

As further illustrated in FIG. 1 , the second functional logic circuitry106 receives the output sequence of data 170 from the memory storagedevice 104. In an exemplary embodiment, the second functional logiccircuitry 106 compares the output sequence of data 170 as received fromthe memory storage device 104 with an expected value of the outputsequence of data 170 that corresponds to the serial input sequence ofdata 150 in the shift mode of operation as shown by the direction 190.When the output sequence of data 170 as received from the memory storagedevice 104 matches the expected value of the output sequence of data170, the internal circuitry under test of the memory storage device 104operates as expected. However, when the output sequence of data 170 asreceived from the memory storage device 104 does not match the expectedvalue of the output sequence of data 170, the internal circuitry undertest of the memory storage device 104 operates unexpectedly as a resultof the one or more manufacturing faults within the memory storage device104. In another exemplary embodiment and as also discussed above, thesecond functional logic circuitry 106 represents one or more otherelectronic devices communicatively coupled to the memory storage device104. In this other exemplary embodiment, the output sequence of data 170as received from the memory storage device 104 is applied to the secondfunctional logic circuitry 106 to electronically stress the secondfunctional logic circuitry 106 to test for the presence of the one ormore manufacturing faults within the second functional logic circuitry106 in the capture mode of operation as shown by the direction 192 andthe scan mode of operation as shown by the direction 194.

Exemplary Memory Device

FIG. 2 illustrates a block diagram of a memory device according to anexemplary embodiment of the present disclosure. A memory device 200operates in the testing mode of operation, as described above in FIG. 1. In the testing mode of operation as illustrated in FIG. 2 , the memorydevice 200 operates on the testing sequence of data 168 to provide theoutput sequence of test data 156. The testing sequence of data 168represents the serial input sequence of data 150 in the shift mode ofoperation or the parallel input sequence of data 152 in the capture modeof operation. In the exemplary embodiment illustrated in FIG. 2 , thememory device 200 includes internal circuitry under test 202, a memoryarray 204, and internal circuitry not under test 206. The memory device200 can represent an exemplary embodiment of the memory device 114 asdescribed above in FIG. 1 .

As illustrated in FIG. 2 , the internal circuitry under test 202receives the testing sequence of data 168 in the shift mode of operationand the capture mode of operation, as described above in FIG. 1 .Thereafter, the internal circuitry under test 202 operates on thetesting sequence of data 168. For example, the internal circuitry undertest 202 can operate on the testing sequence of data 168 in the shiftmode of operation to test for the presence of the one or moremanufacturing faults within the internal circuitry under test 202. Asanother example, the internal circuitry under test 202 can pass-throughthe testing sequence of data 168, without further processing, which canthereafter be used to electronically stress the second functional logiccircuitry 106 to test for the presence of the one or more manufacturingfaults within the second functional logic circuitry 106. Next, theinternal circuitry under test 202 delivers the output sequence of testdata 156. In an exemplary embodiment, the internal circuitry under test202 can include a sense amplifier/write driver, and/or an output latchto provide some examples. In some situations, the memory array 204and/or the internal circuitry not under test 206, such as row selectioncircuitry, and/or column selection circuitry to provide some examples,can be disabled, for example, turned-off, to save power in the testingmode of operation.

First Exemplary Memory Device

FIG. 3 illustrates a block diagram of a first exemplary embodiment forthe memory device according to an exemplary embodiment of the presentdisclosure. As illustrated in FIG. 3 , a memory device 300 operates inthe conventional read/write mode of operation and/or in the testing modeof operation as described above in FIG. 1 and FIG. 2 . The conventionalread/write mode of operation is not to be described in further detail.As such various circuitry and/or various interconnections to operate inthe conventional read/write mode of operation are not illustrated inFIG. 3 . However, these circuitry and/or interconnections will bereadily apparent to those skilled in the relevant art(s) withoutdeparting from the spirit and scope of the present disclosure. In theshift mode of operation as described above in FIG. 1 and FIG. 2 , thememory device 300 determines whether it operates as expected orunexpectedly as a result of the one or more manufacturing faults withinthe memory device 300. Otherwise, the memory device 300 assists intesting of one or more other electronic devices communicatively coupledto the memory device 300 for the presence of the one or moremanufacturing faults in the capture mode of operation and/or the scanmode of operation as described above in FIG. 1 and FIG. 2 . Asillustrated in FIG. 3 , the memory device 300 includes the internalcircuitry under test 202, the memory array 204, the internal circuitrynot under test 206. The memory device 300 can represent an exemplaryembodiment of the memory device 200 as described above in FIG. 2 .

In the exemplary embodiment illustrated in FIG. 3 , the first latchingcircuitry 112 provides the input sequence of data 166 as the testingsequence of data 168 in the shift mode of operation, in the capture modeof operation, and in the scan mode of operation as described above inFIG. 1 . The second latching circuitry 116 similarly provides thetesting sequence of data 168 as the serial output sequence of scan data154 in the scan mode of operation as described above in FIG. 1 . Also,the second latching circuitry 116 can provide the testing sequence ofdata 168 as a testing sequence of data 350 to the memory device 300 inthe shift mode of operation and the capture mode of operation. In theexemplary embodiment illustrated in FIG. 3 , the second latchingcircuitry 116 includes a shadow latch 314 and an output latch 302. In anexemplary embodiment, the shadow latch 314 includes one or more gatedlatches to provide the serial output sequence of scan data 154 and thetesting sequence of data 350 upon a falling edge, namely a transitionfrom a logical one to a logical zero, of a memory clocking signal, suchas the memory clocking signal 164 to provide an example. The one or moregated latches can include one or more gated set-reset (SR) logical NORlatches, one or more gated SR logical NAND latches, one or more SR gatedlogical AND-OR latches, and/or one or more gated JK latches to providesome examples.

As illustrated in FIG. 3 , the memory device 300 operates on the testingsequence of data 350 to generate the output sequence of test data 156 inthe shift mode of operation and the capture mode of operation. In theexemplary embodiment illustrated in FIG. 3 , the internal circuitryunder test 202 includes the output latch 302 and the internal circuitrynot under test 206 having row selection circuitry 304, column selectioncircuitry 306, and a sense amplifier/write driver 308, having a writedriver 310 and a sense amplifier 312. In this exemplary embodiment, thememory array 204, the row selection circuitry 304, the column selectioncircuitry 306, and the sense amplifier/write driver 308 can be disabled,for example, turned-off, to save power in the testing mode of operation.

In the shift mode of operation and the capture mode of operation, asdescribed above in FIG. 1 and FIG. 2 , the output latch 302 receives thetesting sequence of data 350. Thereafter, the output latch 302 operateson the testing sequence of data 350 to generate the output sequence oftest data 156 in the shift mode of operation and the capture mode ofoperation. Next, in the shift mode of operation and the capture mode ofoperation, the output latch 302 delivers the output sequence of testdata 156. In an exemplary embodiment, the output latch 302 includes oneor more gated latches to provide the output sequence of test data 156upon a falling edge, namely a transition from a logical one to a logicalzero, of the memory clocking signal, such as the memory clocking signal164 to provide an example.

Second Exemplary Memory Device

FIG. 4 illustrates a block diagram of a second exemplary embodiment forthe memory device according to an exemplary embodiment of the presentdisclosure. As illustrated in FIG. 4 , a memory device 400 operates inthe conventional read/write mode of operation and/or in the testing modeof operation as described above in FIG. 1 and FIG. 2 . The conventionalread/write mode of operation is not to be described in further detail.As such various circuitry and/or various interconnections to operate inthe conventional read/write mode of operation are not illustrated inFIG. 4 . However, these circuitry and/or interconnections will bereadily apparent to those skilled in the relevant art(s) withoutdeparting from the spirit and scope of the present disclosure. In theshift mode of operation as described above in FIG. 1 and FIG. 2 , thememory device 400 determines whether it operates as expected orunexpectedly as a result of the one or more manufacturing faults withinthe memory device 400. Otherwise, the memory device 400 assists intesting of one or more other electronic devices communicatively coupledto the memory device 400 for the presence of the one or moremanufacturing faults in the capture mode of operation and/or the scanmode of operation as described above in FIG. 1 and FIG. 2 . Asillustrated in FIG. 4 , the memory device 400 includes the internalcircuitry under test 202, the memory array 204, the internal circuitrynot under test 206. The memory device 400 can represent an exemplaryembodiment of the memory device 200 as described above in FIG. 2 .

In the exemplary embodiment illustrated in FIG. 4 , the first latchingcircuitry 112 provides the input sequence of data 166 as the testingsequence of data 168 in the shift mode of operation, in the capture modeof operation, and in the scan mode of operation as described above inFIG. 1 . The second latching circuitry 116 similarly provides thetesting sequence of data 168 as the serial output sequence of scan data154 in the scan mode of operation as described above in FIG. 1 .

As illustrated in FIG. 4 , the memory device 400 operates on the testingsequence of data 350 to generate the output sequence of test data 156 inthe shift mode of operation and the capture mode of operation. In theexemplary embodiment illustrated in FIG. 4 , the internal circuitryunder test 202 includes the output latch 302 and a sense amplifier/writedriver 408 having a write driver 404, switching circuitry 406, and asense amplifier 408 and the internal circuitry not under test 206includes the row selection circuitry 304 and the column selectioncircuitry 306. In this exemplary embodiment, the memory array 204, therow selection circuitry 304 and the column selection circuitry 306 canbe disabled, for example, turned-off, to save power in the testing modeof operation.

In the shift mode of operation and the capture mode of operation, asdescribed above in FIG. 1 and FIG. 2 , the write driver 404 operates onthe testing sequence of data 168 to generate a testing sequence of data450. For example, the write driver 404 operates on the testing sequenceof data 168 in a substantially similar manner as if the write driver 404were to write the testing sequence of data 168 to one or more memorycells of the memory array 204 in the conventional write mode ofoperation. Thereafter, the switching circuitry 406 couples the writedriver 404 to the sense amplifier 408 in the shift mode of operation andthe capture mode of operation to provide testing sequence of data 452from the testing sequence of data 450. However, in the conventionalread/write mode of operation, the switching circuitry 406 decouples thewrite driver 404 to the sense amplifier 408 allowing the write driver404 to write a sequence of data to the memory array 204 and the senseamplifier to read a sequence of data from the memory array. Next in theshift mode of operation and the capture mode of operation, as describedabove in FIG. 1 and FIG. 2 , the sense amplifier 408 operates on thetesting sequence of data 452 to generate a testing sequence of data 454.For example, the sense amplifier 408 operates on the testing sequence ofdata 452 in a substantially similar manner as if the sense amplifier 408were to sense the testing sequence of data 452 from the one or morememory cells of the memory array 204 in the conventional read mode ofoperation. Thereafter, in the shift mode of operation and the capturemode of operation, as described above in FIG. 1 and FIG. 2 , the outputlatch 302 operates on the testing sequence of data 454 to generate theoutput sequence of test data 156. Next, in the shift mode of operation,as described above in FIG. 1 and FIG. 2 , the output latch 302 deliversthe output sequence of test data 156.

Third Exemplary Memory Device

FIG. 5 illustrates a block diagram of a third exemplary embodiment forthe memory device according to an exemplary embodiment of the presentdisclosure. As illustrated in FIG. 5 , a memory device 500 operates inthe conventional read/write mode of operation and/or in the testing modeof operation as described above in FIG. 1 and FIG. 2 . The conventionalread/write mode of operation is not to be described in further detail.As such various circuitry and/or various interconnections to operate inthe conventional read/write mode of operation are not illustrated inFIG. 5 . However, these circuitry and/or interconnections will bereadily apparent to those skilled in the relevant art(s) withoutdeparting from the spirit and scope of the present disclosure. In theshift mode of operation as described above in FIG. 1 and FIG. 2 , thememory device 500 determines whether it operates as expected orunexpectedly as a result of the one or more manufacturing faults withinthe memory device 500. Otherwise, the memory device 500 assists intesting of one or more other electronic devices communicatively coupledto the memory device 500 for the presence of the one or moremanufacturing faults in the capture mode of operation and/or the scanmode of operation as described above in FIG. 1 and FIG. 2 . Asillustrated in FIG. 5 , the memory device 500 includes the internalcircuitry under test 202, the memory array 204, the internal circuitrynot under test 206. The memory device 500 can represent an exemplaryembodiment of the memory device 200 as described above in FIG. 2 .

In the exemplary embodiment illustrated in FIG. 5 , the first latchingcircuitry 112 provides the input sequence of data 166 as the testingsequence of data 168 in the shift mode of operation, in the capture modeof operation, and in the scan mode of operation as described above inFIG. 1 . The second latching circuitry 116 similarly provides thetesting sequence of data 168 as the serial output sequence of scan data154 in the scan mode of operation as described above in FIG. 1 . Also,the second latching circuitry 116 can provide the testing sequence ofdata 168 as the testing sequence of data 350 to the memory device 300 inthe shift mode of operation and the capture mode of operation.

As illustrated in FIG. 5 , the memory device 500 operates on the testingsequence of data 350 to generate the output sequence of test data 156 inthe shift mode of operation and the capture mode of operation. In theexemplary embodiment illustrated in FIG. 5 , the internal circuitryunder test 202 includes multiplexing circuitry 502 and the internalcircuitry not under test 206 includes the output latch 302, the rowselection circuitry 304, the column selection circuitry 306, and thesense amplifier/write driver 308, having the write driver 310 and thesense amplifier 312. In this exemplary embodiment, the memory array 204,the output latch 302, the row selection circuitry 304, the columnselection circuitry 306, and the sense amplifier/write driver 308 can bedisabled, for example, turned-off, to save power in the testing mode ofoperation.

In the shift mode of operation and the capture mode of operation, asdescribed above in FIG. 1 and FIG. 2 , the multiplexing circuitry 502receives the testing sequence of data 350. Thereafter, in the shift modeof operation and the capture mode of operation, as described above inFIG. 1 and FIG. 2 , the multiplexing circuitry 502 selectively providesthe testing sequence of data 350 as the output sequence of test data 156in the shift mode of operation and the capture mode of operation.However, in the conventional read mode of operation, the multiplexingcircuitry 502 selects a sequence of data, shown as a dashed arrow inFIG. 5 , read from one or more memory cells of the memory array 204 assensed by the sense amplifier 312 in the conventional read mode ofoperation.

Fourth Exemplary Memory Device

FIG. 6 illustrates a block diagram of a fourth exemplary embodiment forthe memory device according to an exemplary embodiment of the presentdisclosure. As illustrated in FIG. 6 , a memory device 600 operates inthe conventional read/write mode of operation and/or in the testing modeof operation as described above in FIG. 1 and FIG. 2 . The conventionalread/write mode of operation is not to be described in further detail.As such various circuitry and/or various interconnections to operate inthe conventional read/write mode of operation are not illustrated inFIG. 6 . However, these circuitry and/or interconnections will bereadily apparent to those skilled in the relevant art(s) withoutdeparting from the spirit and scope of the present disclosure. In thescan mode of operation as described above in FIG. 1 and FIG. 2 , thememory device 600 assists in testing of one or more other electronicdevices communicatively coupled to the memory device 600 for thepresence of the one or more manufacturing faults as described above inFIG. 1 and FIG. 2 . As illustrated in FIG. 6 , the memory device 600includes the memory array 204 and the internal circuitry not under test206. The memory device 600 can represent an exemplary embodiment of thememory device 200 as described above in FIG. 2 .

As illustrated in FIG. 6 , the first latching circuitry 112 provides theinput sequence of data 166 as the testing sequence of data 168 in theshift mode of operation, in the capture mode of operation, and in thescan mode of operation as described above in FIG. 1 . The secondlatching circuitry 116 similarly provides the testing sequence of data168 as the serial output sequence of scan data 154 in the scan mode ofoperation as described above in FIG. 1 .

In the exemplary embodiment illustrated in FIG. 6 , the internalcircuitry not under test 206 includes the output latch 302, the rowselection circuitry 304, the column selection circuitry 306, and thesense amplifier/write driver 308, having the write driver 310 and thesense amplifier 312. In this exemplary embodiment, the memory array 204,the output latch 302, the row selection circuitry 304, the columnselection circuitry 306, and the sense amplifier/write driver 308 can bedisabled, for example, turned-off, to save power in the testing mode ofoperation.

Exemplary Shift Mode of Operation of the Exemplary Testing Environmentfor Testing the Memory Device

FIG. 7 illustrates a flowchart of an exemplary shift mode of operationof the exemplary testing environment according to an exemplaryembodiment of the present disclosure. The disclosure is not limited tothis operational description. Rather, it will be apparent to ordinarypersons skilled in the relevant art(s) that other operational controlflows are within the scope and spirit of the present disclosure. Thefollowing discussion describes exemplary operation flow 700 for a shiftmode of operation of an exemplary testing environment, such as theexemplary testing environment 100 to provide an example.

At step 702, the exemplary operation flow 700 selects a serial inputsequence of data, such as the serial input sequence of data 150 toprovide an example, from among the serial input sequence of data and aparallel input sequence of data, such as the parallel input sequence ofdata 152 to provide an example, in the shift mode of operation. In anexemplary embodiment, multiplexing circuitry, such as the firstmultiplexing circuitry 110 to provide an example, selects the serialinput sequence of data from among the serial input sequence of data andthe parallel input sequence of data.

At step 704, the exemplary operation flow 700 delivers the serial inputsequence of data to a memory device, such as the memory device 114, thememory device 200, the memory device 300, the memory device 400, thememory device 500, or the memory device 600 to provide some examples, inthe shift mode of operation. In an exemplary embodiment, latchingcircuitry, such as the first latching circuitry 112 to provide anexample, delivers the serial input sequence of data to the memory devicein accordance with a memory clocking signal, such as the memory clockingsignal 164 to provide an example.

At step 706, the exemplary operation flow 700 operates on the serialinput sequence of data delivered in step 704 in the shift mode ofoperation. In an exemplary embodiment, internal circuitry under test ofthe memory device, such as the internal circuitry under test 202 toprovide an example, can simply pass through the serial input sequence ofdata delivered in step 704 to provide a serial output sequence of data,such as the output sequence of test data 156 to provide an example.

At step 708, the exemplary operation flow 700 selects the serial outputsequence of data from among the serial output sequence of data and anoutput sequence of scan data, such as the serial output sequence of scandata 154 to provide an example, in the shift mode of operation. In anexemplary embodiment, multiplexing circuitry, such as the secondmultiplexing circuitry 118 to provide an example, selects the serialoutput sequence of data from among the serial output sequence of dataand the output sequence of scan data.

Exemplary Capture Mode of Operation

FIG. 8 illustrates a flowchart of an exemplary capture mode of operationof the exemplary testing environment according to an exemplaryembodiment of the present disclosure. The disclosure is not limited tothis operational description. Rather, it will be apparent to ordinarypersons skilled in the relevant art(s) that other operational controlflows are within the scope and spirit of the present disclosure. Thefollowing discussion describes exemplary operation flow 800 for acapture mode of operation of an exemplary testing environment, such asthe exemplary testing environment 100 to provide an example.

At step 802, the exemplary operation flow 800 selects a parallel inputsequence of data, such as the parallel input sequence of data 152 toprovide an example, from among a serial input sequence of data, such asthe serial input sequence of data 150 to provide an example and theparallel input sequence of data in the capture mode of operation. In anexemplary embodiment, multiplexing circuitry, such as the firstmultiplexing circuitry 110 to provide an example, selects the parallelinput sequence of data from among the serial input sequence of data andthe parallel input sequence of data.

At step 804, the exemplary operation flow 800 delivers the parallelinput sequence of data to a memory device, such as the memory device114, the memory device 200, the memory device 300, the memory device400, the memory device 500, or the memory device 600 to provide someexamples, in the capture mode of operation. In an exemplary embodiment,latching circuitry, such as the first latching circuitry 112 to providean example, delivers the parallel input sequence of data to the memorydevice in accordance with a memory clocking signal, such as the memoryclocking signal 164 to provide an example.

At step 806, the exemplary operation flow 800 operates on the parallelinput sequence of data delivered in step 804 in the capture mode ofoperation. In an exemplary embodiment, internal circuitry under test ofthe memory device, such as the internal circuitry under test 202 toprovide an example, can simply pass through the parallel input sequenceof data delivered in step 804 to provide a parallel output sequence ofdata, such as the output sequence of test data 156 to provide anexample.

At step 808, the exemplary operation flow 800 selects the paralleloutput sequence of data from among the parallel output sequence of dataand an output sequence of scan data, such as the serial output sequenceof scan data 154 to provide an example, in the capture mode ofoperation. In an exemplary embodiment, multiplexing circuitry, such asthe second multiplexing circuitry 118 to provide an example, selects theparallel output sequence of data from among the parallel output sequenceof data and the output sequence of scan data.

Exemplary Scan Mode of Operation

FIG. 9 illustrates a flowchart of an exemplary scan mode of operation ofthe exemplary testing environment according to an exemplary embodimentof the present disclosure. The disclosure is not limited to thisoperational description. Rather, it will be apparent to ordinary personsskilled in the relevant art(s) that other operational control flows arewithin the scope and spirit of the present disclosure. The followingdiscussion describes exemplary operation flow 900 for a scan mode ofoperation of an exemplary testing environment, such as the exemplarytesting environment 100 to provide an example.

At step 902, the exemplary operation flow 700 selects a serial inputsequence of data, such as the serial input sequence of data 150 toprovide an example, from among the serial input sequence of data and aparallel input sequence of data, such as the parallel input sequence ofdata 152 to provide an example, in the scan mode of operation. In anexemplary embodiment, multiplexing circuitry, such as the firstmultiplexing circuitry 110 to provide an example, selects the serialinput sequence of data from among the serial input sequence of data andthe parallel input sequence of data.

At step 904, the exemplary operation flow 900 delivers the exemplaryoperation flow 900 delivers the serial input sequence of data tolatching circuitry, such as the second latching circuitry 116 to providean example, in the scan mode of operation. In an exemplary embodiment,other latching circuitry, such as the first latching circuitry 112 toprovide an example, delivers the serial input sequence of data to thelatching circuitry in accordance with a memory clocking signal, such asthe memory clocking signal 164 to provide an example.

At step 906, the exemplary operation flow 900 delivers the serial inputsequence of data delivered in step 904 as an output sequence of scandata, such as the serial output sequence of scan data 154 to provide anexample. In an exemplary embodiment, the latching circuitry of step 904delivers the output sequence of scan data.

At step 908, the exemplary operation flow 900 selects the outputsequence of scan data from among a serial output sequence of data, suchas the output sequence of test data 156 to provide an example, and theoutput sequence of scan data in the scan mode of operation. In anexemplary embodiment, multiplexing circuitry, such as the secondmultiplexing circuitry 118 to provide an example, selects the outputsequence of scan data from among the serial output sequence of data andthe output sequence of scan data.

CONCLUSION

The foregoing Detailed Description discloses a memory storage device.The memory storage device includes first multiplexing circuitry, firstlatching circuitry, a memory device including a memory array, internalcircuitry under test, and internal circuitry not under test, secondlatching circuitry, and second multiplexing circuitry. The firstmultiplexing circuitry provides a serial sequence of data or a parallelsequence of data as an input sequence of data. The first latchingcircuitry provides the input sequence of data as a testing sequence ofdata in accordance with a memory clocking signal. The internal circuitryunder test operates on the testing sequence of data to provide a serialsequence of output data or a parallel sequence of output data. Thememory array and the internal circuitry not under test are disabled. Thesecond latching circuitry provides the testing sequence of data as asecond serial sequence of output data in accordance with the memoryclocking signal. The second multiplexing circuitry provides the serialsequence of output data, the parallel sequence of output data, or thesecond serial sequence of output data as an output sequence of data.

The foregoing Detailed Description also discloses a memory device. Thememory device includes a memory array, row selection circuitry, columnselection circuitry, a sense amplifier/write driver, and an outputlatch. The memory array, the row selection circuitry, the columnselection circuitry, and the sense amplifier/write are disabled in atesting mode of operation. The output latch receives an input sequenceof data in the testing mode of operation in accordance with a memoryclocking signal, operates on the input sequence of data to provide anoutput sequence of data in the testing mode of operation, and deliversthe output sequence of data in accordance with the clocking signal inthe testing mode of operation.

The foregoing Detailed Description further discloses a method foroperating a memory storage device. The method includes: providing, bythe memory storage device, a serial sequence of data in a first mode ofoperation or in a second mode of operation or a parallel sequence ofdata in a third mode of operation, passing through, by first internalcircuitry of a memory device of the memory storage device, the serialsequence of data in the first mode of operation and the parallelsequence of data in the third mode of operation to provide a firstsequence of output data, disabling, by the memory storage device, secondinternal circuitry of the memory device, passing through, by latchingcircuitry of the memory storage device, the serial sequence of data inthe second mode of operation to provide a second sequence of outputdata, and providing, by the memory storage device, the first sequence ofoutput data in the first mode of operation and in the third mode ofoperation or the second sequence of output data in the second mode ofoperation.

The foregoing Detailed Description referred to accompanying figures toillustrate exemplary embodiments consistent with the disclosure.References in the foregoing Detailed Description to “an exemplaryembodiment” indicates that the exemplary embodiment described caninclude a particular feature, structure, or characteristic, but everyexemplary embodiment may not necessarily include the particular feature,structure, or characteristic. Moreover, such phrases are not necessarilyreferring to the same exemplary embodiment. Further, any feature,structure, or characteristic described in connection with an exemplaryembodiment can be included, independently or in any combination, withfeatures, structures, or characteristics of other exemplary embodimentswhether or not explicitly described.

The foregoing Detailed Description is not meant to limiting. Rather, thescope of the disclosure is defined only in accordance with the followingclaims and their equivalents. It is to be appreciated that the foregoingDetailed Description, and not the following Abstract section, isintended to be used to interpret the claims. The Abstract section canset forth one or more, but not all exemplary embodiments, of thedisclosure, and thus, is not intended to limit the disclosure and thefollowing claims and their equivalents in any way.

The exemplary embodiments described within foregoing DetailedDescription have been provided for illustrative purposes, and are notintended to be limiting. Other exemplary embodiments are possible, andmodifications can be made to the exemplary embodiments while remainingwithin the spirit and scope of the disclosure. The foregoing DetailedDescription has been described with the aid of functional buildingblocks illustrating the implementation of specified functions andrelationships thereof. The boundaries of these functional buildingblocks have been arbitrarily defined herein for the convenience of thedescription. Alternate boundaries can be defined so long as thespecified functions and relationships thereof are appropriatelyperformed.

Embodiments of the disclosure can be implemented in hardware, firmware,software, or any combination thereof. Embodiments of the disclosure canalso be implemented as instructions stored on a machine-readable medium,which can be read and executed by one or more processors. Amachine-readable medium can include any mechanism for storing ortransmitting information in a form readable by a machine (e.g., acomputing circuitry). For example, a machine-readable medium can includenon-transitory machine-readable mediums such as read only memory (ROM);random access memory (RAM); magnetic disk storage media; optical storagemedia; flash memory devices; and others. As another example, themachine-readable medium can include transitory machine-readable mediumsuch as electrical, optical, acoustical, or other forms of propagatedsignals (e.g., carrier waves, infrared signals, digital signals, etc.).Further, firmware, software, routines, instructions can be describedherein as performing certain actions. However, it should be appreciatedthat such descriptions are merely for convenience and that such actionsin fact result from computing devices, processors, controllers, or otherdevices executing the firmware, software, routines, instructions, etc.

The foregoing Detailed Description fully revealed the general nature ofthe disclosure that others can, by applying knowledge of those skilledin relevant art(s), readily modify and/or adapt for various applicationssuch exemplary embodiments, without undue experimentation, withoutdeparting from the spirit and scope of the disclosure. Therefore, suchadaptations and modifications are intended to be within the meaning andplurality of equivalents of the exemplary embodiments based upon theteaching and guidance presented herein. It is to be understood that thephraseology or terminology herein is for the purpose of description andnot of limitation, such that the terminology or phraseology of thepresent specification is to be interpreted by those skilled in relevantart(s) in light of the teachings herein.

What is claimed is:
 1. A method for operating a memory storage device,the memory storage device including a memory array and circuitry undertest, the method comprising: providing, by first latching circuitrywithin the memory storage device, an input sequence of data inaccordance with a memory clocking signal; operating on, by the circuitryunder test, the input sequence of data to provide a first sequence ofoutput data; providing, by second latching circuitry within the memorystorage device, the input sequence of data as a second sequence ofoutput data in accordance with the memory clocking signal; andselecting, by multiplexing circuitry within the memory storage device,the first sequence of output data or the second sequence of output dataas an output sequence of data.
 2. The method of claim 1, furthercomprising providing, by the multiplexing circuitry, the output sequenceof data to functional logic circuitry coupled to the memory storagedevice to electronically stress the functional logic circuitry to testfor a presence of a manufacturing fault in the functional logiccircuitry.
 3. The method of claim 1, further comprising providing, bythe multiplexing circuitry, the output sequence of data to functionallogic circuitry coupled to the memory storage device to analyze theoutput sequence of data to determine whether the circuitry under testoperates as expected.
 4. The method of claim 3, wherein the circuitryunder test operates as expected in response to the output sequence ofdata matching an expected value of the output sequence of data andoperates unexpectedly in response to the output sequence of data notmatching the expected value of the output sequence of data.
 5. Themethod of claim 1, wherein the method further comprises disabling thememory array and circuitry not under test, wherein the circuitry notunder test comprises one or more of row selection circuitry, columnselection circuitry, and a sense amplifier/write driver.
 6. The methodof claim 1, wherein the circuitry under test comprises one or more of anoutput latch, a sense amplifier/write driver, and an other multiplexingcircuitry, and wherein the operating on the input sequence of datacomprises: operating on, by the output latch, the sense amplifier/writedriver, or the other multiplexing circuitry, the input sequence of datato provide the first sequence of output data.
 7. The method of claim 1,wherein the providing the input sequence of data in accordance with thememory clocking signal comprises: providing, by the first latchingcircuitry, the input sequence of data upon a rising edge of the memoryclocking signal, and wherein the providing the input sequence of data asthe second sequence of output data in accordance with the memoryclocking signal comprises: providing, by the second latching circuitry,the input sequence of data as the second sequence of output data upon afalling edge of the memory clocking signal.
 8. The method of claim 7,wherein the providing the input sequence of data as the second sequenceof output data comprises: passing through the input sequence of data toprovide the second sequence of output data in accordance with the memoryclocking signal.
 9. A device, comprising: first latching circuitryconfigured to: provide a serial sequence of input data; and provide aparallel sequence of input data; a memory device configured to: operateon the serial sequence of input data to provide a first serial sequenceof output data; and operate on the parallel sequence of input data toprovide a parallel sequence of output data; second latching circuitryconfigured to pass through the serial sequence of input data to providea second serial sequence of output data; and multiplexing circuitryconfigured to provide the first serial sequence of output data, theparallel sequence of output data, and the second serial sequence ofoutput data to functional logic circuitry coupled to the memory device.10. The device of claim 9, wherein the multiplexing circuitry is furtherconfigured to: provide the parallel sequence of output data in a capturemode of operation or the second serial sequence of output data in a scanmode of operation to electronically stress the functional logiccircuitry to test for a presence of a manufacturing fault in thefunctional logic circuitry.
 11. The device of claim 9, wherein themultiplexing circuitry is further configured to provide the first serialsequence of output data in a shift mode of operation to the functionallogic circuitry to analyze the first serial sequence of output data andthe second serial sequence of output data to determine whether acircuitry under test operates as expected.
 12. The device of claim 11,wherein the circuitry under test operates as expected in response to thefirst serial sequence of output data, the second serial sequence ofoutput data, or the parallel sequence of output data matching anexpected value and operates unexpectedly in response to the first serialsequence of output data, the second serial sequence of output data, orthe parallel sequence of output data not matching the expected value.13. The device of claim 11, wherein the circuitry under test comprisesone or more of an output latch, a sense amplifier/write driver, and another multiplexing circuitry, wherein the output latch, the senseamplifier/write driver, or the other multiplexing circuitry isconfigured to: operate on the serial sequence of input data to providethe first serial sequence of output data in the shift mode of operation,and operate on the parallel sequence of input data to provide theparallel sequence of output data in a capture mode of operation.
 14. Thedevice of claim 9, wherein the memory device comprises one or more ofrow selection circuitry, column selection circuitry, and a senseamplifier/write driver, and wherein the row selection circuitry, thecolumn selection circuitry, or the sense amplifier/write driver isconfigured to be disabled in a shift mode of operation and a capturemode of operation.
 15. The device of claim 9, wherein: the firstlatching circuitry is further configured to: provide the serial sequenceof input data upon a rising edge of a memory clocking signal; andprovide the parallel sequence of input data upon the rising edge of amemory clocking signal; and the second latching circuitry is furtherconfigured to pass through the serial sequence of input data upon afalling edge of the memory clocking signal.
 16. A system, comprising:first functional logic circuitry; a memory storage device configured to:operate on serial input sequence of data from the first functional logiccircuitry to provide a first serial output sequence of data; operate ona parallel input sequence of data from the first functional logiccircuitry to provide a parallel output sequence of data; andpass-through the serial input sequence of data to provide a secondserial output sequence of data; and second functional logic circuitryconfigured to analyze the first serial output sequence of data todetermine whether the memory storage device operates as expected orunexpectedly.
 17. The system of claim 16, wherein: the memory storagedevice operates as expected in response to the first serial outputsequence of data, the second serial output sequence of data, or theparallel output sequence of data matching an expected value; and thememory storage device operates unexpectedly in response to the firstserial output sequence of data, the second serial output sequence ofdata, or the parallel output sequence of data not matching the expectedvalue.
 18. The system of claim 16, wherein the memory storage devicecomprises one or more of row selection circuitry, column selectioncircuitry, and a sense amplifier/write driver, and wherein the rowselection circuitry, the column selection circuitry, or the senseamplifier/write driver is configured to be disabled in in a shift modeof operation and a capture mode of operation.
 19. The system of claim16, wherein the second functional logic circuitry is further configuredto be electronically stressed by the parallel output sequence of data orthe second serial output sequence of data to test for a presence of amanufacturing fault in the second functional logic circuitry.
 20. Thesystem of claim 16, wherein the first functional logic circuitry isconfigured to provide the serial input sequence of data in a shift modeof operation or a scan mode of operation or a parallel input sequence ofdata in a capture mode of operation.